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XN06116|XN6116 Datasheet

  • XN06116|XN6116

  • Composite Device - Composite Transistors

  • 3頁

  • ETC

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Composite Transistors
XN06116
(XN6116)
Silicon PNP epitaxial planar transistor
Unit: mm
For switching/digital circuits
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
3
2
1
0.30
+0.10
鈥?.05
鈻?/div>
Basic Part Number
鈥?/div>
UNR2116 (UN2116)
脳
2
0.50
+0.10
鈥?.05
10藲
1.1
+0.2
鈥?.1
(0.65)
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?00
300
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
0 to 0.1
Marking Symbol: 6Y
Internal Connection
4
5
6
1.1
+0.3
鈥?.1
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Tr2
3
2
Tr1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
Ratio
*
1
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE(Small
/Large)
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
Min
鈭?0
鈭?0
Typ
Max
Unit
V
V
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.01
160
0.50
0.99
鈭?/div>
0.25
鈭?.9
鈭?/div>
0.2
鈭?0%
4.7
80
+30%
460
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
錚?/div>
V
V
V
k鈩?/div>
MHz
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
V
CE(sat)
V
OH
V
OL
R
1
f
T
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2003
SJJ00098BED
0.4
鹵0.2
5藲
1

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